Electronic band structure of Sb2Te3

• Autoři: MOHELSKY I.; WYZULA J.; LE MARDELÉ F.; ABADIZAMAN Farzin; CAHA Ondřej; DUBROKA Adam; SUN X. D.; CHO C. W.; PIOT B. A.; TANZIM M. F.; AGUILERA I.; BAUER G.; SPRINGHOLZ G.; ORLITA M.
• Rok publikování: 2024
• Druh: Článek v odborném periodiku
• Časopis / Zdroj: Physical Review B
• Fakulta / Pracoviště MU: Přírodovědecká fakulta
• www: https://doi.org/10.1103/PhysRevB.109.165205
• Doi: http://dx.doi.org/10.1103/PhysRevB.109.165205
• Klíčová slova: Landau levels; Topological insulators; Narrow band gap systems; Cyclotron resonance

Přiložené soubory

• 2481401.pdf

• Popis: We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the I' point or along the trigonal axis, and its width reaches Eg = (190 +/- 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method.

Související projekty

• Jevy v heterostrukturách oxidů přechodových kovů vyvolané dopováním a rozhraním